Effect of substrate temperature on structure and intrinsic stress in vapor-deposited amorphous silicon carbide film

Thin Solid Films

Volumn 467, Issue 1-2, 2004, Pages 294-299

  Kim, Ju Young ^a   Lee, Baik Woo ^a   Nam, Ho Seok ^a   Kwon, Dongil ^a  

^a Seoul National University   (South Korea)

Author keywords

Amorphous materials; Molecular dynamics simulation; Silicon carbide

Indexed keywords

CRYSTALLINE SILICON SUBSTRATES; LOW-TENSILE INTRINSIC STRESSES; RADIAL DISTRIBUTION FUNCTIONS; SUBSTRATES TEMPERATURE;

AMORPHOUS MATERIALS; CARBON; COOLING; DEPOSITION; ION BEAMS; MAGNETRON SPUTTERING; MOLECULAR DYNAMICS; OPTICAL PROPERTIES; SILICON; SILICON CARBIDE; TENSILE STRESS; VAPOR DEPOSITION;

THIN FILMS;

EID: 4444307302     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.04.030     Document Type: Article

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