Nanosized β-SiC films prepared by a Cat-CVD with negative bias at low substrate temperature

Applied Surface Science

Volumn 217, Issue 1-4, 2003, Pages 314-318

  Wang, B ^a   Zhao, Q ^a   Li, J C ^a   Wang, B B ^a   Song, X M ^a   Yang, X D ^a   Yan, H ^a   Wang, M ^b  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

^b BEIHANG UNIVERSITY   (China)

Author keywords

Cat CVD; Ion bombardment; Nanosized SiC films; Negative bias

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FILM GROWTH; GRAIN SIZE AND SHAPE; ION BOMBARDMENT; NUCLEATION; THIN FILMS;

FILM STRUCTURES;

SILICON CARBIDE;

EID: 0038200715     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00545-2     Document Type: Article

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