Growth mechanism of α-SiC hetero-epitaxial films by PLD as studied on the laser photon, pulse-width and substrates dependence

Optical Materials

Volumn 23, Issue 1-2, 2003, Pages 43-47

  Muto, Hachizo ^a,b   Kamiya, Shin Ichiro ^b   Kusumori, Takeshi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b GIFU UNIVERSITY   (Japan)

Author keywords

Epitaxy; Heteroepitaxy; Picosecond laser; Pulsed laser ablation; Silicon carbide (or SiC); Thin film

Indexed keywords

EPITAXIAL GROWTH; NEODYMIUM LASERS; PHOTONS; PULSED LASER DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; THERMAL EFFECTS; THIN FILMS;

HETEROEPITAXIAL FILMS;

FILM GROWTH;

EID: 0038070204     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-3467(03)00057-0     Document Type: Conference Paper

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