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Thin Solid Films

Volumn 406, Issue 1-2, 2002, Pages 138-144

Growth and microhardness of SiC films by plasma-enhanced chemical vapor deposition

(4) Seo, Ji Youn a Yoon, Seog Young b Niihara, Koichi c Kim, Kwang Ho b

a Samsung Corning Co Ltd (South Korea)

b Pusan National University (South Korea)

c OSAKA UNIVERSITY (Japan)

Author keywords

Chemical vapor deposition (CVD); Hardness; Plasma processing and deposition; Silicon carbide

Indexed keywords

CRYSTAL GROWTH; CRYSTALLIZATION; MICROHARDNESS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SUBSTRATES;

CRYSTALLINITY;

SILICON CARBIDE;

EID: 0037051220 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(02)00061-5 Document Type: Article

Times cited : (44)

References (21)

1
- 0039100415
- (1969) Ceram. Bull. , vol.48 , pp. 859
- Price, R.J.¹

2
- 0008847490
- University of South Carolina Press, Columbia, SC
- (1973) Silicon Carbide , pp. 668
- Marshall, R.C.¹ Faust, J.W.² Ryan C.E., Jr.³

3
- 0021455373
- (1984) Appl. Phys. Lett. , vol.45 , pp. 72
- Sasaki, K.¹ Sakuma, E.² Misawa, S.³ Yoshida, S.⁴ Gonda, S.⁵

4
- 0018516729
- (1979) J. Appl. Phys. , vol.50 , pp. 5790
- Bergemeister, E.A.¹ Von Muench, W.² Pettenpaul, E.³

5
- 36749107328
- (1977) J. Appl. Phys. , vol.48 , pp. 4831
- Von Muench, W.¹ Pfaffender, I.²

6
- 0030110034
- (1996) J. Cryst. Growth , vol.160 , pp. 253
- Josiek, A.¹ Langlais, F.²

7
- 0027683605
- (1993) J. Mater. Res. , vol.8 , pp. 2617
- Chiu, C.C.¹ Desu, S.B.²

8
- 0001839982
- (1992) Mater. Res. Soc. Symp. Proc. , vol.250 , pp. 35
- Sotrchos, S.V.¹ Papasouliotis, G.D.²

9
- 0026992346
- (1992) J. Cryst. Growth , vol.125 , pp. 533
- Rodrigues-Clemente, R.¹ Figureas, A.² Garelik, S.³ Arnas, B.⁴ Combescure, C.⁵

10
- 0030126951
- (1996) J. Electrochem. Soc. , vol.143 , pp. 1355
- Takahashi, T.¹ Hagiwara, K.² Egashira, Y.³ Komiyama, H.⁴

11
- 0033702811
- (2000) Thin Solid Films , vol.371 , pp. 53
- Teker, K.¹ Jacob, C.² Chung, J.³ Hong, M.H.⁴

12
- 0029253267
- (1995) J. Electrochem. Soc. , vol.142 , pp. 565-571
- Nordell, N.¹ Nishino, S.² Yang, J.W.³ Jacob, C.⁴ Pirouz, P.⁵

13
- 33747502586
- (1983) Appl. Phys. Lett. , vol.42 , pp. 460
- Nishino, S.¹ Powell, J.A.² Will, H.³

14
- 79960670145
- (1987) Phys. Scr. , vol.19 , pp. 61
- Pethica, J.B.¹ Oliver, W.C.²

15
- 0008848333
- US Patent No 4848141, July, 1989
- Oliver, W.C.¹ Pethica, J.B.²

16
- 0008847491
- C.Y. Yang, M.M. Rahman, G.L. Harris (Eds.), Springer-Verlag, Berlin
- (1992) Amorphous and Crystalline Silicon Carbide IV , pp. 119
- Shimizu, H.¹ Naito, K.² Ishio, S.³

17
- 0032636929
- (1999) Thin Solid Films , vol.341 , pp. 42
- Kim, H.S.¹ Park, Y.J.² Choi, I.H.³ Baik, Y.J.⁴

18
- 0029310093
- (1995) J. Mater. Sci. , vol.30 , pp. 2675
- Lin, T.T.¹ Hon, M.H.²

19
- 0031119794
- (1997) Mater. Lett. , vol.30 , pp. 339
- Jung, Y.G.¹ Park, S.W.² Choi, S.C.³

20
- 0030101947
- (1996) Jpn. J. Appl. Phys. , vol.35 , pp. 1648
- Choi, K.¹ Uchida, Y.² Matsumura, M.³

21
- 0026875935
- (1992) J. Mater. Res. , vol.7 , pp. 1564
- Oliver, W.C.¹ Pharr, G.M.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.