Optical properties of cubic SiC grown on Si substrate by chemical vapor deposition

Microelectronic Engineering

Volumn 83, Issue 1 SPEC. ISS., 2006, Pages 165-169

  Feng, Zhe Chuan ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

3C SiC; Chemical vapor deposition; Fourier transform infrared spectroscopy; Photoluminescene; Raman scattering; Si

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; CRYSTALLINE MATERIALS; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; RAMAN SCATTERING; SINGLE CRYSTALS;

FILM THICKNESS; OPTICAL SPECTRA;

SILICON CARBIDE;

EID: 30344449164     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.10.044     Document Type: Conference Paper

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