Effect of substrate bias on β-SiC films prepared by PECVD

Materials Science and Engineering: B

Volumn 98, Issue 3, 2003, Pages 190-192

  Wang, B ^a   Liu, W ^a   Wang, G J ^a,c   Liao, B ^b   Wang, J J ^b   Zhu, M K ^a   Wang, H ^a   Yan, H ^a  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

^b BEIJING INSTITUTE OF TECHNOLOGY   (China)

^c LIAOCHENG UNIVERSITY   (China)

Author keywords

Crystalline; Film; PECVD; Substrate bias; SiC

Indexed keywords

ENERGY ABSORPTION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; POSITIVE IONS; SEMICONDUCTING FILMS; SILICON WAFERS; X RAY DIFFRACTION ANALYSIS;

NEGATIVE BIAS;

SILICON CARBIDE;

EID: 0038780829     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00588-3     Document Type: Article

References (7)

1. Bertran E., Viera G., Martinez E., et al. Thin Solid Films. 337-378:2000;495.
2. Yugo S., Kanai T., Kimura T., Muto T. Appl. Phys. Lett. 58:1991;11.
3. Wolter S.D., Stoney B.R., Glass J.T., et al. Appl. Phys. Lett. 62:1993;15.
4. Spitzer W.G., Klenment D.A., Frosch C.J. Phys. Rev. 113:1959;133.
5. Sun Y., Kirimoto K., Miyasato T. Jpn J. Appl. Phys. 39:2000;6202.
6. Yan H., Wang B., Song X.M., Chen G.H., Wong S.P., Kwok R.W.M. Thin Solid Films. 368:2000;241.
7. Chayaharaq A., Kiuchi M., Kinomura A., et al. Jpn J. Appl. Phys. 32:1993;1287.