High-rate chemical vapor deposition of nanocrystalline silicon carbide films by radio frequency thermal plasma

Materials Letters

Volumn 57, Issue 13-14, 2003, Pages 1982-1986

  Liao, F ^a   Park, S ^a   Larson, J M ^b   Zachariah, M R ^a   Girshick, S L ^a  

^a University of Minnesota   (United States)

^b Spinnaker Semiconductor   (United States)

Author keywords

Ceramics; Chemical vapor deposition; Nanomaterials; Si tetrachlorine precursor; Silicon carbide; Thermal plasmas; Thin films

Indexed keywords

CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; PLASMA APPLICATIONS; SILICON CARBIDE; X RAY DIFFRACTION ANALYSIS;

THERMAL PLASMA;

THIN FILMS;

EID: 0037378306     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-577X(02)01116-3     Document Type: Article

References (5)

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