High-speed and high-output InP-InGaAs unitraveling-carrier photodiodes

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 10, Issue 4, 2004, Pages 709-727

  Ito, Hiroshi ^a   Kodama, Satoshi ^a   Muramoto, Yoshifumi ^a   Furuta, Tomofumi ^a   Nagatsuma, Tadao ^a   Ishibashi, Tadao ^a  

^a NTT CORPORATION   (Japan)

Author keywords

High power, high speed; High frequency measurements; Inp ingaas; Millimeter wave; Optical gate; Photodiode; Unitraveling carrier photodiode (UTC PD); Wireless link

Indexed keywords

BANDWIDTH; BIT ERROR RATE; OPTICAL COMMUNICATION; OPTOELECTRONIC DEVICES; QUANTUM EFFICIENCY; RELIABILITY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

HIGH POWER; HIGH-FREQUENCY MEASUREMENTS; OPTICAL GATES; WIRELESS LINKS;

PHOTODIODES;

EID: 7544244901     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2004.833883     Document Type: Article

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