Photoresponse characteristics of uni-traveling-carrier photodiodes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4283, Issue , 2001, Pages 469-479

  Ishibashi, T ^a   Furuta, T ^a   Fushimi, H ^a   Ito, H ^a  

^a NTT CORPORATION   (Japan)

Author keywords

InP InGaAs device; Photodiode; UTC PD

Indexed keywords

ABSORPTION; BANDWIDTH; DIFFUSION; ELECTRON TRANSPORT PROPERTIES; NUMERICAL ANALYSIS; PHOTOCURRENTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

PHOTORESPONSE;

PHOTODIODES;

EID: 0034774169     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.432597     Document Type: Conference Paper

References (14)

1. Velocity matched distributed photodetectors with high-saturation power and large bandwidth
2. Velocity matched distributed photodetectors with p-i-n photodiodes
3. Uni-traveling-carrier photodiodes
4. 40 Gbit/s high sensitivity optical receiver with uni-traveling-carrier photodiode acting as a decision IC driver
5. 40 Gbit/s optical gate using optical modulator driven by uni-traveling-carrier photodiode
6. 80 Gbit/s optoelectronic delayed flip-flop circuit using resonant tunnelling diodes and uni-traveling-carrier photodiode
7. Optoelectronic clock recovery circuit using resonant tunnelling diode and uni-traveling-carrier photodiode
8. High-speed response of uni-traveling carrier photodiodes
9. Uni-traveling-carrier photodiodes for electromagnetic wave generation
10. Photocurrent dynamics of uni-traveling-carrier and conventional photodiodes
11. Nonlinearities in p-i-n microwave photodetectors
12. High power uni-traveling-carrier photodiodes
13. Improved response of uni-traveling-carrier photodiodes by carrier injection