High efficiency edge-illuminated uni-travelling-carrier-structure refracting-facet photodiode

Electronics Letters

Volumn 35, Issue 19, 1999, Pages 1664-1665

  Fukano, H ^a   Muramoto, Y ^a   Takahata, K ^a   Matsuoka, Y ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CHARGE CARRIERS; ELECTRIC POTENTIAL; LIGHT ABSORPTION; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR JUNCTIONS; WAVEFORM ANALYSIS;

REFRACTING-FACET PHOTODIODES (RFPD); UNI-TRAVELLING CARRIER (UTC) PHOTODIODES;

PHOTODIODES;

EID: 0032639139     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19991148     Document Type: Article

References (5)

1. MIYAMOTO, Y., YONEYAMA, M., HAGIMOTO, K., ISHIBASHI, T., and SHIMIZU, N.: '40Gbits/s high-sensitivity optical receiver with unitravelling-carrier photodiode acting as decision IC driver', Electron. Lett., 1998, 34, pp. 214-215
2. SHIMIZU, N., WATANABE, M., FURUTA, T., and ISHIBASHI, T.: 'InP-InGaAs uni-traveling-carrier photodiodes with improved 3-dB bandwidth of over 150GHz', IEEE Photonics Technol. Lett., 1998, 10, pp. 412-414
3. SHIMIZU, N., MORI, K., ISHIBASHI, T., and YAMABAYASHI, Y.: 'Quantum efficiency of InP/InGaAs uni-traveling-carrier photodiodes at 1.55-1.7μm measured using supercontinuum generation in optical fiber', Jpn. J. Appl. Phys., 1999, 38, pp. 2573-2576
4. FUKANO, H., KOZEN, A., KATO, K., and NAKAJIMA, O.: 'Edge-illuminated refracting-facet photodiode with high responsivity and low-operation voltage', Electron. Lett., 1996, 32, pp. 2346-2347
5. LEE, W.S., and HADJIFOTIOU, A.: 'Optical transmission over 140km at 40Gbit/s by OTDM'. Opt. Fiber Commun. Tech. Dig., 1995, pp. 286-287