InP/InGaAs uni-travelling-carrier photodiode with 220 GHz bandwidth

Electronics Letters

Volumn 35, Issue 18, 1999, Pages 1556-1557

  Ito, H ^a   Furuta, T ^a   Kodama, S ^a   Watanabe, N ^a   Ishibashi, T ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CAPACITANCE; ELECTRIC POTENTIAL; ELECTRON ABSORPTION; ELECTRON TRANSPORT PROPERTIES; ELECTROOPTICAL EFFECTS; ESTIMATION; ETCHING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM PHOSPHIDE;

ELECTRON VELOCITY; ELECTROOPTIC SAMPLING; UNITRAVELLING CARRIER;

PHOTODIODES;

EID: 0033365915     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19991043     Document Type: Article

References (6)

1. GIBONEY, K.S., NAGARAJAN, R.L., REYNOLDS, T.E., ALLEM, S.T., MIRIN, R.P., RODWELL, M.J.W., and BOWERS, J.E.: 'Travelling-wave photodetectors with 172-GHz bandwidth and 76-GHz bandwidth-efficiency product', IEEE Photonics Technol. Lett., 1995, 7, (4), pp. 412-414
2. ISHIBASHI, T., SHIMIZU, N., KODAMA, S., ITO, H., NAGATSUMA, T., and FURUTA, T.: 'Uni-traveling-carrier photodiodes'. Tech. Dig. Ultrafast Electronics and Optoelectronics, 1997, pp. 83-87
3. SHIMIZU, N., WATANABE, N., FURUTA, T., and ISHIBASHI, T.: 'InP-InGaAs uni-traveling-carrier photodiode with improved 3-dB bandwidth of over 150GHz', IEEE Photonics Technol Lett., 1998, 10, (3), pp. 412-414
4. SZE, S.M.: 'Physics of semiconductor devices' (John Wiley & Sons, New York, 1981), p. 159
5. WINDHORN, T.H., COOK, L.W., HAASE, M.A., and STILLMAN, G.E.: 'Electron transport in InP at high electric fields', Appl. Phys. Lett., 1983, 42, (8), pp. 725-727
6. KURISHIMA, K., NAKAJIMA, H., KOBAYASHI, K., MATSUOKA, Y., and ISHIBASHI, T.: 'Fabrication and characterization of high-performance InP/InGaAs double-heterojunction bipolar transistors', IEEE Trans., 1994, ED-41, (8), pp. 1319-1326