Characterisation of uni-travelling-carrier photodiode monolithically integrated with matching circuit

Electronics Letters

Volumn 37, Issue 20, 2001, Pages 1246-1247

  Nagatsuma, T ^a   Ishibashi, T ^a   Hirata, A ^a   Hirota, Y ^a   Minotani, T ^a   Sasaki, A ^a   Ito, H ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ELECTRIC FIELD EFFECTS; ELECTROOPTICAL EFFECTS; FOURIER TRANSFORMS; FREQUENCY DOMAIN ANALYSIS; LASER PULSES; MILLIMETER WAVES; MIM DEVICES; NATURAL FREQUENCIES; PHOTOCURRENTS; PHOTODIODES; TIME DOMAIN ANALYSIS; WAVEFORM ANALYSIS; WAVEGUIDES;

ELECTRO-OPTIC SAMPLING (EOS); UNI-TRAVELLING-CARRIER PHOTODIODE (UTC-PD);

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0035959874     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010858     Document Type: Article

References (8)

1. Broadband wireless access using millimeter-wave over fiber systems
2. Progress of instrumentation and measurement toward millimeter-wave photonics
3. Photonic techniques for use on the Atacama large millimeter array
4. InP/InGaAs uni-traveling-carrier photodiodes
5. 60 GHz high output power uni-travelling-carrier photodiode with integrated bias circuit
6. All optoelectronic generation and detection of millimeter-wave signals
7. Measurement of high-speed devices and integrated circuits using electro-optic sampling techniques
8. Active mode locking at 50 GHz repetition frequency by half-frequency modulation of monolithic semiconductor lasers integrated with electroabsorption modulators