An optoelectronic logic gate monolithically integrating resonant tunneling diodes and a uni-traveling-carrier photodiode

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 B, 1999, Pages 1223-1226

  Akeyoshi, Tomoyuki ^a   Shimizu, Naofumi ^a   Osaka, Jiro ^a   Yamamoto, Masafumi ^a   Ishibashi, Tadao ^a   Sano, Kimikazu ^a   Murata, Koichi ^a   Sano, Eiichi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Flip flop; InGaAs; InP; MBE; MOCVD; Monolithic integration; Optoelectronic logic gate; Photodiode; Resonant tunneling diode

Indexed keywords

FLIP FLOP CIRCUITS; INTEGRATED OPTOELECTRONICS; LOGIC GATES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; MONOLITHIC INTEGRATED CIRCUITS; PHOTODIODES; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SUBSTRATES;

INDIUM GALLIUM ARSENIDE; RESONANT TUNNELING DIODES; UNITRAVELING CARRIER PHOTODIODE;

TUNNEL DIODES;

EID: 0032672891     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.1223     Document Type: Article

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