160 GHz actively modelocked semiconductor laser

Electronics Letters

Volumn 39, Issue 6, 2003, Pages 520-521

  Ohno, T ^a   Sato, K ^b   Iga, R ^a   Kondo, Y ^a   Furuta, T ^a   Yoshino, K ^a   Ito, H ^a  

^a NTT CORPORATION   (Japan)

^b NTT Network Innovation Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLITUDE MODULATION; ELECTRON ABSORPTION; JITTER; LASER MODE LOCKING; LASER PULSES; MODULATORS; SPURIOUS SIGNAL NOISE;

ELECTROABSORPTION (EA) MODULATORS;

SEMICONDUCTOR LASERS;

EID: 0037456953     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030388     Document Type: Article

References (4)

1. KAWANISHI, S., TAKARA, H., UCHIYAMA, K., SHAKE. I., and MORI, K.: '3 Tbit/s (160 Gbit/s × 19 channel) optical TDM and WDM transmission experiment', Electron. Lett., 1999, 35, (10), pp. 826-827
2. SATO, K., KOTAKA, I., HIRANO, A., ASOBE, M., MIYAMOTO, Y., SHIMIZU, N., and HAGIMOTO, K.: 'High-repetition frequency pulse generation at 102 GHz using modelocked lasers integrated with electroabsorption modulators', Electron. Lett., 1998, 34, (8), pp. 790-792
3. SATO, K., KOTAKA, I., KONDO, Y., and YAMAMOTO, M.: 'Active mode locking at 50 GHz repetition frequency by half-frequency modulation of monolithic semiconductor lasers integrated with electroabsorption modulators', Appl. Phys. Lett., 1996, 69, (18), pp. 2626-2628
4. SATO, K., KUWAHARA, S., MIYAMOTO, Y., MURATA, K., and MIYAZAWA, H.: 'Mode-locked lasers for 43-Gb/s carrier-suppressed return-to-zero pulse generation'. Tech. Dig. ECOC '01, Amsterdam, The Netherlands, 2001, Vol. 3, Paper We. F. 3.6, pp. 340-341