Highly reliable uni-travelling-carrier photodiodes for 40 Gbit/s optical transmission systems

Electronics Letters

Volumn 38, Issue 7, 2002, Pages 332-334

  Furuta, T ^a   Fushimi, H ^a   Yasui, T ^a   Muramoto, Y ^a   Kamioka, H ^a   Mawatari, H ^a   Fukano, H ^a   Ishibashi, T ^a   Ito, H ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DATA COMMUNICATION SYSTEMS; ETCHING; FAILURE ANALYSIS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL COMMUNICATION; PHOTOCURRENTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; STRESS ANALYSIS;

POWER DISSIPATION; UNITRAVELLING CARRIER PHOTODIODE; WET ETCHING;

PHOTODIODES;

EID: 0037187765     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020213     Document Type: Article

References (4)

1. Uni-traveling-carrier photodiodes
2. Uni-traveling-carrier photodiodes for electromagnetic wave generation
3. A polarization-independent high-efficiency refracting facet uni-traveling-carrier photodiode with a bandwidth over 50 GHz
4. 40 Gbit/s high sensitivity optical receiver with unitravelling-carrier photodiode acting as a decision IC driver