RF saturation mechanism of InP/InGaAs uni-travelling-carrier photodiode

Electronics Letters

Volumn 36, Issue 8, 2000, Pages 750-751

  Shimizu, N ^a   Miyamoto, Y ^a   Hirano, A ^a   Sato, K ^a   Ishibashi, T ^b  

^a NTT Network Innovation Laboratories   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTRIC SPACE CHARGE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

UNITRAVELLING CARRIER PHOTODIODES;

PHOTODIODES;

EID: 0033891233     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000555     Document Type: Article

References (6)

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6. RESS, H.D., and GRAY, K.W.: 'Indium phosphide: A semiconductor for microwave devices', Solid State Electron Devices, 1976, 1, pp. 1-8