High-output-voltage, high speed, high efficiency uni-travelling-carrier waveguide photodiode

Electronics Letters

Volumn 34, Issue 1, 1998, Pages 122-123

  Muramoto, Y ^a   Kato, K ^a   Mitsuhara, M ^a   Nakajima, O ^a   Matsuoka, Y ^a   Shimizu, N ^a   Ishibashi, T ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; OPTICAL WAVEGUIDES; QUANTUM EFFICIENCY;

UNI-TRAVELLING CARRIER WAVEGUIDE PHOTODIODES (UTC WGPD);

PHOTODIODES;

EID: 0032495313     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980054     Document Type: Article

References (9)

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3. WILLIAMS, A.R., KELLNER, A.L., JIANG, X.S., and YU, P.K.L.: 'InGaAs/ InP waveguide photodetector with high saturation intensity', Electron. Lett., 1992, 28, (24), pp. 2258-2259
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7. LIN, L.Y., WU, M.C., ITOH, T., VANG, T.A., MULLER, R.E., SIVKO, D.L., and CHO, A.Y.: 'Velocity-matched distributed photodetectors with high-saturation power and large bandwidth', IEEE Photonics Technol. Lett., 1996, 8, (10), pp. 1376-1378
8. ISHIBASHI, T., SHIMIZU, N., KODAMA, S., ITO, H., NAGATSUMA, T., and FURUTA, T.: 'Uni-travelling-carrier photodiodes'. Tech. Dig. Ultrafast Electron. and Optoelectron., 1997, pp. 166-168
9. SHIMIZU, N., WATANABE, N., FURUTA, T., and ISHIBASHI, T.: 'High-speed InP/InGaAs uni-travelling-carrier photodiodes with 3-dB bandwidth over 150GHz'. 1997 Device Research Conf., Fort Collins, 1997, Paper VI.B.-1