100 and 160 Gbit/s operation of unit-travelling-carrier photodiode module

Electronics Letters

Volumn 40, Issue 6, 2004, Pages 378-380

  Muramoto, Y ^a   Yoshino, K ^a   Kodama, S ^a   Hirota, Y ^a   Ito, H ^a   Ishibashi, T ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ETCHING; FOURIER TRANSFORMS; OPTICAL COMMUNICATION; OPTICAL FIBERS; PHOTOLITHOGRAPHY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; WAVEGUIDES;

ELECTRO-OPTIC SAMPLING TECHNIQUE; EPITAXIAL LAYER; FIBER-OPTIC COMMUNICATION SYSTEM; LOW JUNCTION CAPACITANCE; POLARIZATION DEPENDENCE OF RESPONSIVITY; PULSE PHOTORESPONSE; UNI-TRAVELLING CARRIER PHOTODIODE; WET ETCHING;

PHOTODIODES;

EID: 1842854617     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20040249     Document Type: Article

References (8)

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