2.3 Picoseconds optical gate monolithically integrating photodiode and electroabsorption modulator

Electronics Letters

Volumn 37, Issue 19, 2001, Pages 1185-1186

  Kodama, S ^a   Ito, T ^a   Watanabe, N ^a   Kondo, S ^a   Takeuchi, H ^a   Ito, H ^a   Ishibashi, T ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIT ERROR RATE; COMMUNICATION CHANNELS (INFORMATION THEORY); ELECTROOPTICAL DEVICES; LASER MODE LOCKING; LIGHT ABSORPTION; LIGHT MODULATORS; MONOLITHIC INTEGRATED CIRCUITS; OPTICAL COMMUNICATION; OPTICAL SWITCHES; OPTICAL WAVEGUIDES; PHOTOCURRENTS; SEMICONDUCTOR QUANTUM WELLS; TIME DIVISION MULTIPLEXING; VOLTAGE MEASUREMENT;

ELECTROABSORPTION MODULATORS (EAM); TRAVELLING-WAVE (TW) STRUCTURES;

PHOTODIODES;

EID: 0035855779     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010780     Document Type: Article

References (7)

1. Nonlinear-optical loop mirror
2. A terahertz optical asymmetric demultiplexer (TOAD)
3. Ultrahigh-speed all-optical demultiplexing based on low-temperature-grown MQWs
4. Hybrid integrated symmetric Mach-Zehnder all-optical switch with ultrafast, high extinction switching
5. Uni-traveling-carrier photodiodes
6. 40 Gbit/s optical gate using optical modulator driven by uni-travelling carrier photodiode
7. Polarisation-insensitive travelling-wave electrode electroabsorption (TW-EA) modulator with bandwidth over 50 GHz and driving voltage less than 2V