Low-frequency noise analysis of the impact of an LaO cap layer in HfSiON/Ta2C gate stack nMOSFETs

ECS Transactions

Volumn 25, Issue 7, 2009, Pages 237-245

  Simoen, E ^a   Akheyar, A ^a   Rohr, E ^a   Mercha, A ^a   Claeys, C ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICS; HAFNIUM COMPOUNDS; LANTHANUM COMPOUNDS; LOGIC GATES; MOSFET DEVICES; SILICON; SILICON COMPOUNDS; SPECTRAL DENSITY; TANTALUM COMPOUNDS; THERMAL NOISE; THRESHOLD VOLTAGE;

CAP LAYERS; GATE STACKS; HFSION GATE DIELECTRICS; LOW FIELD MOBILITY; LOW-FREQUENCY NOISE; MAXIMUM TRANSCONDUCTANCE; METAL GATE; NOISE MAGNITUDE;

NITROGEN COMPOUNDS;

EID: 74349113714     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3203961     Document Type: Conference Paper

References (26)

1. C.C. Hobbs, L.R.C. Fonseca, A. Khizhnik, V. Dhandapani, S.B. Samavedam, W.J. Taylor, J.M. Grant, L.R.G. Dip, D.H. Triyoso, R.I. Hegde, D.C. Gilmer, R. Garcia, D. Roan, M.L. Lovejoy, R.S. Rai, E.A. Hebert, H.-H. Tseng, S.G.H. Anderson, B.E. White and P.J. Tobin, IEEE Trans. Electron Devices, 51, 971 (2004).
2. C.C. Hobbs, L.R.C. Fonseca, A. Khizhnik, V. Dhandapani, S.B. Samavedam, W.J. Taylor, J.M. Grant, L.R.G. Dip, D.H. Triyoso, R.I. Hegde, D.C. Gilmer, R. Garcia, D. Roan, M.L. Lovejoy, R.S. Rai, E.A. Hebert, H.-H. Tseng, S.G.H. Anderson, B.E. White and P.J. Tobin, IEEE Trans. Electron Devices, 51, 978 (2004).
3. K. Manabe, T. Hase, H. Watanabe and K. Yasutake, Jpn. J. Appl. Phys., 45, 9053 (2006).
4. P. Srinivasan, E. Simoen, R. Singanamalla, H.Y. Yu, C. Claeys and D. Misra, Solid-St. Electron., 50, 992 (2006).
5. S.P. Devireddy, B. Min, Z. Çelik-Butler, H.-H. Tseng, P.J. Tobin, F. Wang and A. Zlotnicka, IEEE Trans. Electron Devices, 53, 538 (2006).
6. S.P. Devireddy, B. Min, Z. Çelik-Butler, H.-H. Tseng, P.J. Tobin and A. Zlotnicka, Microelectron. Reliab., 47, 1228 (2007).
7. C. Claeys, E. Simoen, P. Srinivasan and D. Misra, Solid-St. Electron., 51, 627 (2007).
8. P. Magnone, F. Crupi, L. Pantisano and C. Pace, Appl. Phys. Lett., 90, 073507-1 (2007).
9. A Mercha, R. Singanamalla, V. Subramanian, E. Simoen, W. Sansen, G. Groeseneken, K. De Meyer and S. Decoutere, In: Proc. 19th Int. Conf. On Noise and Fluctuations, Eds M. Tacano, Y. Yamamoto and M. Nakao, AIP Proc. CP922, The American Institute of Physics, p. 33 (2007).
10. Y.-C. Yeo, T.-J. King and C. Hu, J. Appl. Phys., 92, 7266 (2002).
11. H.P. Yu, K.L. Pey, W.K. Choi, D.A. Antoniadis, E.A. Fitzgerald, D.Z. Chi and C.H. Tung, Appl. Phys. Lett., 89, 233520-1 (2006).
12. S. Kubicek, T. Schram, V. Paraschiv, R. Vos, M. Demand, C. Adelmann, T. Witters, L. Nyns, L.-Å. Ragnarsson, H.Y. Yu, A. Veloso, R. Singanamalla, T. Kauerauf, E. Rohr, S. Brus, C. Vrancken, V.S. Chang, R. Mitsuhashi, A. Akheyar, H.-J. Cho, J.C Hooker, B.J. O'Sullivan, T. Chiarella, C. Kerner, A. Delabie, S. Van Elshocht, K. De Meyer, S. De Gendt, P. Absil, T. Hoffmann and S. Biesemans, In: IEDM Tech. Dig., The IEEE, p. 49 (2007).
13. V.S. Chang, L.-Å. Ragnarsson, G. Pourtois, R. O'Connor, C. Adelmann, S. Van Elshocht, A. Delabie, J. Swerts, N. Van der Heyden, T. Conard, H.-J. Cho, A. Akheyar, R. Mitsuhashi, T. Witters, B.J. O'Sullivan, L. Pantisano, E. Rohr, P. Lehnen, S. Kubicek, T. Schram, S. De Gendt, P.P. Absil and S. Biesemans, In: IEDM Tech. Dig., The IEEE, p. 535 (2007).
14. H.-J. Cho, H.Y. Yu, V.S. Chang, A. Akheyar, S. Jakschik, T. Conard, T. Hantschel, A. Delabie, C. Adelmann, S. Van Elshocht, L.-Å. Ragnarsson, T. Schram, P. Absil and S. Biesemans, IEEE Electron Device Lett., 29, 743 (2008).
15. K.-S. Chang, M.L. Green, J.R. Hattrick-Simpers, I. Takeuchi, J.S. Suehle, O. Celik and S. De Gendt, IEEE Trans. Electron Devices, 55, 2641 (2008).
16. S. Kamiyama, E. Kurosawa and Y. Nara, J. Electrochem. Soc., 155, H373 (2008).
17. C. Claeys, E. Simoen, A. Mercha, L. Pantisano and E. Young, J. Electrochem. Soc., 152, F115 (2005).
18. G. Ghibaudo, Electron. Lett., 24, 543 (1988).
19. G. Ghibaudo, O. Roux, Ch. Nguyen-Duc, F. Balestra and J. Brini, phys. stat. sol. (a), 124, 571 (1991).
20. T. Boutchacha, G. Ghibaudo, G. Guegan and M. Haond, J. Noncryst. Solids, 216, 192 (1997).
21. G. Ghibaudo, O. Roux-dit-Buisson and J. Brini, phys. stat. sol. (a), 132, 501 (1992).
22. E. Simoen, A. Mercha, C. Claeys and E. Young, Appl. Phys. Lett., 85, 1057 (2004).
23. B. Min, S.P. Devireddy, Z. Çelik-Butler, F. Wang, H.-H. Tseng and P.J. Tobin, IEEE Trans. Electron Devices, 51, 1315 (2004).
24. B. Min, S.P. Devireddy, Z. Çelik-Butler, A. Shanware, K. Green, J.J. Chambers, M.V. Visokay and L. Colombo, Appl. Phys. Lett., 86, 082102-1 (2005).
25. B. Min, S.P. Devireddy, Z. Çelik-Butler, A. Shanware, L. Colombo, K. Green, J.J. Chambers, M.R. Visokay and A.L.P. Rotondaro, IEEE Trans. Electron Devices, 53, 1459 (2006).
26. W.-H. Wu, B.-Y. Tsui, M.-C. Chen, Y.-T. Hou, Y. Jin, H.-J. Tao, S.-C. Chen and M.-S. Liang, Appl. Phys. Lett., 89, 162911-1 (2006).