Mechanism for fermi level pinning at electrode/Hf-based dielectric interface: Systematic study of dependence of effective work functions for polycrystalline silicon and fully silicided NiSi electrodes on Hf density at interface

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 12, 2006, Pages 9053-9057

  Manabe, Kenzo ^a   Hase, Takashi ^a   Tatsumi, Toru ^a   Watanabe, Heiji ^b   Yasutake, Kiyoshi ^b  

^a NEC CORPORATION   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

Fermi level pinning; HfSiON; Interface gap states model; Metal gate electrode; MOSFET; NiSi; Poly Si electrode

Indexed keywords

CARRIER CONCENTRATION; DIELECTRIC DEVICES; ELECTRODES; FERMI LEVEL; INTERFACES (MATERIALS);

FERMI LEVEL PINNING; HFSION; INTERFACE GAP STATES MODEL; METAL GATE ELECTRODE; POLY-SI ELECTRODE;

POLYSILANES;

EID: 34547818572     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.9053     Document Type: Article

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