Impact of the gate-electrode/dielectric interface on the low-frequency noise of thin gate oxide n-channel metal-oxide-semiconductor field-effect transistors

Solid-State Electronics

Volumn 51, Issue 4 SPEC. ISS., 2007, Pages 627-632

  Claeys, C ^a,b   Simoen, E ^a   Srinivasan, P ^a,c   Misra, D ^c  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Carrier trapping; Gate electrode; Gate SiON interface; Low frequency noise; MOSFETs; Thin gate oxide

Indexed keywords

CHARGE CARRIERS; CURRENT DENSITY; ELECTRODES; GATE DIELECTRICS; SPURIOUS SIGNAL NOISE; THIN FILM DEVICES;

CARRIER TRAPPING; GATE ELECTRODES; GATE SION INTERFACES; LOW FREQUENCY NOISE; THIN GATE OXIDES;

MOSFET DEVICES;

EID: 34147168032     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.02.011     Document Type: Article

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