Low-frequency noise characteristics of HfSiON gate-dielectric metal-oxide-semiconductor-field-effect transistors

Applied Physics Letters

Volumn 86, Issue 8, 2005, Pages 1-3

  Min, Bigang ^a   Devireddy, Siva Prasad ^a   Celik Butler, Zeynep ^a   Shanware, Ajit ^b   Green, Keith ^b   Chambers, J J ^b   Visokay, M V ^b   Colombo, Luigi ^b  

^a University of Texas at Arlington   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER MOBILITY; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; PERMITTIVITY; SILICA; SPURIOUS SIGNAL NOISE;

DRAIN CURRENTS; DRAIN VOLTAGE; GATE LEAKAGE CURRENTS; LOW-FREQUENCY NOISE;

MOSFET DEVICES;

EID: 17044428052     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1866507     Document Type: Article

References (25)

1. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
2. A. Shanware, M. R. Visokay, J. J. Chambers, A. L. P. Rotondaro, H. Bu, M. J. Bevan, R. Khamankar, S. Aur, P. E. Nicollian, J. McPherson, and L. Colombo, IEEE Int. Reliab. Phys. Symp. Proc. 208 (2003).
3. K. Onishi, R. Choi, C. S. Kang, H.-J. Cho, Y. H. Kim, R. E. Nieh, J. Han, S. A. Krishnan, M. S. Akbar, and J. C. Lee, IEEE Trans. Electron Devices 50, 1517 (2003).
4. K. Kukli, M. Ritala, M. Leskela, T. Sajavaara, J. Keinonen, R. I. Hedge, D. C. Gilmer, and P. J. Tobin, Symp. I, Functional Metal Oxides-Semiconductor Structures. I-I.7 (2003).
5. A. Vandooren, A. Barr, L. Mathew, T. R. White, S. Egley, D. Pham, M. Zavala, S. Samavedam, J. Schaeffer, J. Conner, B. Y. Nguyen, B. E. White, Jr., M. K. Orlowski, and J. Mogab, IEEE Electron Device Lett. 24, 342 (2003).
6. M. R. Visokay, J. J. Chambers, A. L. P. Rotondaro, A. Shanware, and L. Colombo, Appl. Phys. Lett. 80, 3183 (2002).
7. M. A. Quevedo-Lopez, M. El-Bouanani, M. J. Kim, B. E. Gnade, R. M. Wallace, M. R. Visokay, A. LiFatou, J. J. Chambers, and L. Colombo, Appl. Phys. Lett. 82, 4669 (2003).
8. A. Shanware, M. R. Visokay, J. J. Chambers, A. L. P. Rotondaro, J. McPherson, and L. Colombo, IEDM Tech. Dig. 939 (2003).
9. A. L. P. Rotondaro, M. R. Visokay, J. J. Chambers, A. Shanware, R. Khamankar, H. Bu, R. T. Laaksonen, L. Tsung, M. Douglas, R. Kuan, M. J. Bevan, T. Grider, J. McPherson, and L. Colombo, VLSI Tech., Digest of Tech. Papers. Symp. 148 (2002)
10. K. K. Hung, P. K. Ko, C. Hu, and Y. C. Cheng, IEEE Trans. Electron Devices 37, 654 (1990).
11. B. Min, S. Devireddy, Z. Çelik-Butler, F. Wang, A. Zlotnicka, H. Tseng, and P. J. Tobin, IEEE Trans. Electron Devices 51, 1679 (2004).
12. E. Simoen, A. Mercha, L. Pantisano, C. Claeys, and E. Young, Proc. 204th Meeting of Electrochem. Soc. 574 (2003).
13. M. V. Haartman, D. Wu, P. E. Hellstrom, S.-L. Zhang, and M. Ostling, Proc. 17th. Int. Conference on Noise and Fluctuations 381 (2003).
14. T. Horikawa, N. Yasuda, W. Mizubayashi, K. Iwamoto, K. Tominaga, K. Akiyama, K. Yamamoto, H. Hisamatsu, H. Ota, T. Nabatame (MIRAI), and A. Toriumi, Proc. 205th Meeting of Electrochem. Soc. 272 (2003).
15. W. Zhu, J. Han, and T. P. Ma, IEEE Trans. Electron Devices 51, 98 (2004).
16. Y. Tsividis, Operation and Modeling of the MOS Transistor, 2nd ed. (McGraw-Hill, New York, 1999), p. 278.
17. G. Ghibaudo and T. Boutchacha, Microelectron. Reliab. 42, 573 (2002).
18. G. Ghibaudo, Proc. SPIE 5113, 16 (2003).
19. J. Koga, S. Takagi, and A. Toriumi, Proc. Int. Conf. Solid State Devices and Materials, 895 (1994).
20. J. Koga, S. Takagi, and A. Toriumi, IEDM Tech. Dig. 475 (1994).
21. E. P. Vandamme and L. K. J. Vandamme, IEEE Trans. Electron Devices 47, 2146 (2000).
22. F. Wang and Z. Çelik-Butler, Solid-State Electron. 45, 351 (2001).
23. E. Simoen, A. Mercha, L. Pantisano, and C. Claeys, IEEE Trans. Electron Devices 51, 780 (2004).
24. S. Devireddy, B. Min, Z. Çelik-Butler, H. Tseng, P. J. Tobin, F. Wang, and A. Zlotnicka (unpublished).
25. Z. Çelik-Butler and P. Vasina, Solid-State Electron. 43, 1695 (1999).