Low frequency noise characterization of 0.25 μm Si CMOS transistors

Journal of Non-Crystalline Solids

Volumn 216, Issue , 1997, Pages 192-197

  Boutchacha, T ^a,d   Ghibaudo, G ^a   Guegan G ^b   Haond, M ^c  

^a CNRS   (France)

^b CEA LETI   (France)

^c ORANGE LABS   (France)

^d UNIVERSITÉ DES SCIENCES ET DE LA TECHNOLOGIE D ORAN MOHAMED BOUDIAF   (Algeria)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); MOS DEVICES; SEMICONDUCTING SILICON; SPURIOUS SIGNAL NOISE;

DRAIN CURRENT AMPLITUDE; RANDOM TELEGRAPH SIGNAL (RTS) FLUCTUATIONS;

TRANSISTORS;

EID: 0031208585     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(97)00212-3     Document Type: Article

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