The impact of stacked cap layers on effective work function with HfSiON and SiON gate dielectrics

IEEE Electron Device Letters

Volumn 29, Issue 7, 2008, Pages 743-745

  Cho, Hag Ju ^a   Yu, Hong Yu ^b   Chang, Vicent S ^c   Akheyar, Almal ^d   Jakschik, Stefan ^e   Conard, Thierry ^f   Hantschel, Thomas ^f   Delabie, Annelies ^f   Adelmann, Christoph ^f   Van Elshocht, Sven ^f   Ragnarsson, Lars Åke ^f   Schram, Tom ^f   Absil, Philippe ^f   Biesemans, Serge ^f  

^a SAMSUNG Electronics   (South Korea)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^d INFINEON TECHNOLOGIES AG   (Germany)

^e QIMONDA DRESDEN GMBH AND CO OHG   (Germany)

^f IMEC   (Belgium)

Author keywords

Cap layer; Effective work function (EWF); HfSiON; High dielectric; Intermixing; Metal gate; SiON

Indexed keywords

DIELECTRIC MATERIALS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; METALS; WORK FUNCTION;

CAP LAYERS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS (CMOS) DEVICES; EFFECTIVE WORK FUNCTION (EWF); METAL GATES; SION GATE DIELECTRICS;

GATE DIELECTRICS;

EID: 47349127411     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.923317     Document Type: Article

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