Improving threshold voltage and device performance of gate-first HfSiON/metal gate n-MOSFETs by an ALD La2O3 capping layer

Journal of the Electrochemical Society

Volumn 155, Issue 6, 2008, Pages

  Kamiyama, Satoshi ^a,b   Kurosawa, Etsuo ^a   Nara, Yasuo ^a,b  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; DRAIN CURRENT; ELECTRIC PROPERTIES; LANTHANUM COMPOUNDS; LEAKAGE CURRENTS; THRESHOLD VOLTAGE;

CAPPING LAYER; FLATBAND VOLTAGE (VFB; HAFNIUM-SILICON-OXYNITRIDE (HFSION); LANTHANUM-OXIDE (LA2 O3);

MOSFET DEVICES;

EID: 43049108472     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2901915     Document Type: Article

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