Low VT CMOS using doped Hf-based oxides, TaC-based metals and laser-only anneal

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 49-52

  Kubicek, S ^a   Schram, T ^a   Paraschiv, V ^a   Vos, R ^a   Demand, M ^a   Adelmann, C ^a   Witters, T ^a   Nyns, L ^a   Ragnarsson, L A ^a   Yu, H ^a   Veloso, A ^a   Singanamalla, R ^a   Kauerauf, T ^a   Rohr, E ^a   Brus, S ^a   Vrancken, C ^a   Chang, V S ^a   Mitsuhashi, R ^a   Akheyar, A ^a   Cho, H J ^a   Hooker, J C ^a   O'Sullivan, B J ^a   Chiarella, T ^a   Kerner, C ^a   Delabie, A ^a   Van Elshocht, S ^a   De Meyer, K ^a   De Gendt, S ^a   Absil, P ^a   Hoffmann, T ^a   Biesemans, S ^a   more..

^a UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS CIRCUITS; METAL GATE TRANSISTORS;

ELECTRON DEVICES;

EID: 42149095596     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4418860     Document Type: Conference Paper

References (11)

1. Y. Tateshita, IEDM Tech. Dig., p.63, 2006
2. H. Yu, EDL Vol.25, No.5, p.337, May 2004
3. H. R. Harris, Symp. VLSI Technology, p. 154, 2007
4. H. Alshareef, APL, Vol.89, 2006
5. L.-Å. Ragnarsson, EDL, Vol.28, No.6, June 2007
6. H-S. Jung, Symp. VLSI Technology, p.204 2006
7. V. S. Chang, in press, TED
8. P. F. Hsu, Symp. VLSI Technology, p.14, 2006
9. Y. Nishida, Symp. VLSI Technology, p.214, 2007
10. M. Chudzik, Symp. VLSI Technology, p.194, 2007
11. W. J. Taylor et al.., IEDM Tech. Dig., p.625, 2006.