A Dy2O3-capped HfO2 dielectric and TaCx-based metals enabling low-Vt single-metal-single- dielectric gate stack

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 535-538

  Chang, V S ^b   Ragnarsson, L A ^a   Pourtois, G ^a   O'Connor, R ^a   Adelmann, C ^a   Van Elshocht, S ^a   Delabie, A ^a   Swerts, J ^c   Van Der Heyden, N ^a   Conard, T ^a   Cho, H J ^d   Akheyar, A ^e   Mitsuhashi, R ^f   Witters, T ^a   O'Sullivan, B J ^a   Pantisano, L ^a   Rohr, E ^a   Lehnen, P ^g   Kubicek, S ^a   Schram, T ^a   De Gendt, S ^a   Absil, P P ^a   Biesemans, S ^a   more..

^a IMEC   (Belgium)

^b ITSMC   (Belgium)

^c ASM   (Belgium)

^d Samsung   (Belgium)

^e INFINEON TECHNOLOGIES AG   (Germany)

^f Matsushita   (Belgium)

^g Aixtron   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

VALENCE BANDS; WORK FUNCTIONS;

ELECTRON DEVICES;

EID: 50249084493     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4418993     Document Type: Conference Paper

References (9)

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4. H.-J. Cho et al., ICICDT, May 2007.
5. V. S. Chang et al., TED, October 2007.
6. S. Kubicek et al., IEDM, 2007.
7. C. Adelmann Chem. Vap. Deposition, in press.
8. N. Van der Heyden et al., ECS, October 2007.
9. R. Kraft et al., J. Vac. Sci. Technol. B 15(4), p. 967, 1997.