Work function tuning of n -channel metal-oxide field-effect transistors using interfacial yttrium layer in fully silicided nickel gate

Applied Physics Letters

Volumn 89, Issue 23, 2006, Pages

  Yu, H P ^a   Pey, K L ^a,d   Choi, W K ^a,e   Antoniadis, D A ^f   Fitzgerald, E A ^f   Chi, D Z ^b   Tung, C H ^c  

^a SINGAPORE MIT ALLIANCE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

^d NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^e NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^f NONE

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC INSULATORS; ELECTRODES; GATES (TRANSISTOR); SILICON COMPOUNDS; YTTRIUM;

BAND EDGE; GATE INSULATORS; INTERFACIAL YTTRIUM LAYERS; SILICIDED NICKEL GATE;

MOSFET DEVICES;

EID: 33845380543     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2402943     Document Type: Article

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