Improved low frequency noise characteristics of sub-micron MOSFETs with TaSiN/TiN gate on ALD HfO2 dielectric

Microelectronics Reliability

Volumn 47, Issue 8, 2007, Pages 1228-1232

  Devireddy, Siva Prasad ^a   Min, Bigang ^a   Çelik Butler, Zeynep ^a   Tseng, Hsing Huang ^b   Tobin, Philip J ^b   Zlotnicka, Ania ^b  

^a University of Texas at Arlington   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); GATE DIELECTRICS; POLYSILICON; POWER SPECTRAL DENSITY; SPURIOUS SIGNAL NOISE;

CARRIER SCATTERING; COULOMB SCATTERING; DIELECTRIC TRAP DENSITY; METAL GATE DEPOSITION; NOISE MEASUREMENTS;

MOSFET DEVICES;

EID: 34547183036     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.05.006     Document Type: Article

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