High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitors

Thin Solid Films

Volumn 518, Issue 6 SUPPL. 1, 2010, Pages

  Molle, Alessandro ^a   Baldovino, Silvia ^a,b   Spiga, Sabina ^a   Fanciulli, Marco ^a,b  

^a LABORATORIO MDM   (Italy)

^b UNIVERSITY OF MILANO BICOCCA   (Italy)

Author keywords

Dangling bond; Germanium; High k; High mobility; Logics; MOS; Surface passivation

Indexed keywords

ALD PRECURSOR; ATOMIC OXYGEN EXPOSURE; BONDING STATE; CAPACITANCE VOLTAGE MEASUREMENTS; CHANNEL MATERIALS; CHEMICAL NATURE; ELECTRICAL QUALITY; ELECTRICAL RESPONSE; ELECTRICALLY ACTIVE DEFECTS; GATE OXIDE; GATE STACKS; GE SUBSTRATES; HIGH MOBILITY; HIGH PERMITTIVITY DIELECTRIC; HIGH-K GATE STACKS; HIGH-K MATERIALS; HIGH-K OXIDES; HIGH-PERMITTIVITY MATERIAL; HIGH-SPEED; IN-BETWEEN; INTERFACE LAYER; INTERFACE PASSIVATION; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; MOLECULAR BEAM DEPOSITION; OXIDATION TEMPERATURE; OXIDE/SEMICONDUCTOR INTERFACES; OXYGEN PRECURSORS; PMOSFET; STRUCTURAL AND ELECTRICAL PROPERTIES; SURFACE PASSIVATION; ULTRA-THIN;

BELT DRIVES; CAPACITANCE; CAPACITORS; CHARGE COUPLED DEVICES; CHEMICAL MODIFICATION; DANGLING BONDS; GADOLINIUM; GATE DIELECTRICS; HAFNIUM; HAFNIUM COMPOUNDS; LOGIC GATES; METALLIC COMPOUNDS; MICROELECTRONICS; MOS CAPACITORS; MOSFET DEVICES; OXYGEN; PASSIVATION; PERMITTIVITY; SEMICONDUCTOR GROWTH; SILICON COMPOUNDS; SUBSTRATES;

GERMANIUM;

EID: 73649147380     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.10.065     Document Type: Article

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