Structure and thickness-dependent lattice parameters of ultrathin epitaxial Pr2O3 films on Si(001)

Applied Physics Letters

Volumn 85, Issue 7, 2004, Pages 1229-1231

  Schroeder, T ^a   Lee, T L ^a   Zegenhagen, J ^a   Wenger, C ^b   Zaumseil, P ^b   Mussig H J ^b  

^a EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^b IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); LATTICE CONSTANTS; MICROELECTRONICS; MOLECULAR BEAM EPITAXY; MOLECULAR ORIENTATION; OXIDES; SILICATE MINERALS; SYNCHROTRON RADIATION; THICKNESS CONTROL; X RAY DIFFRACTION ANALYSIS;

BULK STRUCTURE; DIELECTRIC BREAKDOWN; SPACE REORIENTATION; VERTICAL STACKING;

THIN FILMS;

EID: 4444345540     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1771465     Document Type: Article

References (10)

1. T. Hori, Gate Dielectrics and MOS ULSIs, Springer Series in Electronics and Physics Vol. 34 (Springer, Berlin, 1996).
2. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
3. H.-J. Müssig, H. J. Osten, E. Bugiel, J. Dabrowski, A. Fissel, and T. Gumminskaja, IEEE International Integrated Reliability Workshop, Final Report (IEEE, New York, 2001), p. 1.
4. H. J. Osten, E. Bugiel, and A. Fissel, Solid-State Electron. 47, 2161 (2003).
5. H.-J. Müssig, J. Dabrowski, K. Ignatovich, J. P. Liu, V. Zavodinsky, and H.-J. Osten, Surf. Sci. 504, 159 (2002).
6. P. Zaumseil, E. Bugiel, J. P. Liu, and H.-J. Osten, Solid State Phenom. 82-84, 789 (2002).
7. A. F. Wells, Structural Inorganic Chemistry (Clarendon, Oxford, 1975).
8. J. Dabrowski and H.-J. Müssig, Silicon Surfaces and Formation of Interfaces (World Scientific, Singapore, 2000).
9. M. Henzler, Prog. Surf. Sci. 42, 297 (1993).
10. A. Fissel, J. Dabrowski, and H. J. Osten, J. Appl. Phys. 91, 8986 (2002).