Atomic oxygen-assisted molecular beam deposition of Gd2O3 films for ultra-scaled Ge-based electronic devices

Materials Science in Semiconductor Processing

Volumn 11, Issue 5, 2008, Pages 236-240

  Molle, A ^a   Spiga, S ^a   Bhuiyan, M N K ^a   Tallarida, G ^a   Perego, M ^a   Wiemer, C ^a   Fanciulli, M ^a,b  

^a LABORATORIO MDM   (Italy)

^b UNIVERSITY OF MILANO BICOCCA   (Italy)

Author keywords

Gadolinium oxide; Germanium; High k

Indexed keywords

ATOMIC OXYGEN; ATOMIC OXYGEN EXPOSURE; BENEFICIAL EFFECTS; ELECTRICAL CHARACTERIZATION; ELECTRONIC DEVICE; EX SITU; GADOLINIUM OXIDE; GE(0 0 1); HIGH-K; IN-SITU; INTERFACE LAYER; MOLECULAR BEAM DEPOSITION; TIME-OF-FLIGHT SECONDARY ION MASS SPECTROSCOPY;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; CHEMICAL MODIFICATION; GADOLINIUM; GERMANIUM; MOLECULAR BEAMS; MOLECULAR OXYGEN; PASSIVATION; SECONDARY ION MASS SPECTROMETRY; SURFACE STRUCTURE;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 70349910223     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2008.10.002     Document Type: Article

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