Elaboration of (1 1 1) oriented 3C-SiC/Si layers for template application in nitride epitaxy

Materials Science and Engineering: B

Volumn 165, Issue 1-2, 2009, Pages 9-14

  Zielinski, M ^a   Portail, M ^b   Roy, S ^b   Chassagne, T ^a   Moisson, C ^a   Kret, S ^c   Cordier, Y ^b  

^a SAVOIE TECHNOLAC   (France)

^b CNRS   (France)

^c INSTITUTE OF PHYSICS   (Poland)

Author keywords

Chemical mechanical polishing; Epitaxy of thin films; Gallium nitride; Silicon carbide

Indexed keywords

ALUMINUM GALLIUM NITRIDE; CHEMICAL MECHANICAL POLISHING; EPITAXIAL GROWTH; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; III-V SEMICONDUCTORS;

3C-SIC FILMS; COMPARATIVES STUDIES; DEFECT HEALING; DIFFERENT LAYERS; DOPANT INCORPORATION; EPITAXY OF THIN FILMS; EPIWAFERS; GROWTH MODES; SI LAYER; WARPINGS;

SILICON CARBIDE;

EID: 72049117118     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2009.02.019     Document Type: Article

References (29)

1. Kukushkin S.A., Osipov A.V., Bessolov V.N., Medvedev B.K., Nevolin V.K., and Tcarik K.A. Rev. Adv. Mater. Sci. 17 (2008) 1
2. Cordier Y., Semond F., Massies J., Leroux M., Lorenzini P., and Chaix C. J. Cryst. Growth 301/302 (2007) 434
3. Takeuchi T., Amano H., Hiramatsu K., Sawaki N., and Akasaki I. J. Cryst. Growth 115 (1991) 634
4. Steckl A.J., Devrajan J., Tran C., and Stall R.A. Appl. Phys. Lett. 69 (1996) 2264
5. Wang D., Hiroyama Y., Tamura M., Ichikawa M., and Yoshida S. Appl. Phys. Lett. 77 (2000) 1846
6. Park C.I., Kang J.H., Kim K.C., Suh E.-K., Lim K.Y., and Nahm K.S. J. Cryst. Growth 224 (2001) 190
7. Komiyama J., Abe Y., Suzuki S., and Nakanishi H. Appl. Phys. Lett. 88 (2006) 091901
8. Komiyama J., Abe Y., Suzuki S., and Nakanishi H. J. Appl. Phys. 100 (2006) 033519
9. Cordier Y., Portail M., Chenot S., Tottereau O., Zielinski M., and Chassagne T. Phys. Stat. Sol. (c) 5 (2008) 1983
10. Leycuras A. Mater. Sci. Forum 338-348 (2000) 241
11. see www.siltronix.com.
12. Nishino S., Powell J.A., and Will H.A. Appl. Phys. Lett. 42 (1983) 460
13. Nishino S., Suhara H., Ono H., and Matsunami H. J. Appl. Phys. 61 (1987) 4889
14. Zielinski M., Ndiaye S., Chassagne T., Juillaguet S., Lewandowska R., Portail M., Leycuras A., and Camassel J. Phys. Stat. Sol. (a) 204 (2007) 981
15. Zielinski M., Leycuras A., Ndiaye S., and Chassagne T. Appl. Phys. Lett. 89 (2006) 131906
16. Zielinski M., Portail M., Chassagne T., Juillaguet S., and Peyre H. J. Cryst. Growth 310 (2008) 3174
17. Portail M., Nemoz M., Zielinski M., and Chassagne T. Mater. Sci. Forum 600-603 (2009) 231
18. Cimalla V., Petzold J., and Eichhorn G. Mater. Sci. Eng. B 46 (1997) 190
19. Semond F., Cordier Y., Grandjean N., Natali F., Damilano B., Vezian S., and Massies J. Phys. Stat. Sol. (a) 188 (2001) 501
20. Horcas I., Fernandez R., Gomez-Rodriguez J.M., Colchero J., Gomez-Herrero J., and Baro A.M. Rev. Sci. Instrum. 78 (2007) 013705
21. Kim K.C., Park C., Roh J., Nahm K.S., and Seo Y.H. J. Vac. Sci. Technol. A 19 (2001) 2636
22. Pezoldt J., Morales F.M., Zgheib Ch., Forster Ch., Stauden Th., Ecke G., Wang Ch., and Masri P. Surf. Interface Anal. 38 (2006) 444
23. Kimoto T., Hirao T., Nakazawa S., Shiomi H., and Matsunami H. J. Cryst. Growth 249 (2003) 208
24. Liaw H.P., and Davis R.F. J. Electrochem. Soc. 131 (1984) 3014
25. Zielinski M., Portail M., Chassagne T., and Cordier Y. Mater. Sci. Forum 600-603 (2009) 207
26. Vicente P., Pernot E., Chaussende D., and Camassel J. Mater. Sci. Forum 389-393 (2001) 729
27. Mank H., Moisson C., Turover D., Twigg M., and Saddow S.E. Mater. Sci. Forum 483-485 (2005) 197
28. Cordier Y., Portail M., Chenot S., Tottereau O., Zielinski M., and Chassagne T. J. Cryst. Growth 310 (2008) 4417
29. Corrion A.L., Poblenz C., Wu F., and Speck J.S. J. Appl. Phys. 103 (2008) 093529