Homoepitaxial growth of 4H-SiC (0 3 3̄ 8) and nitrogen doping by chemical vapor deposition

Journal of Crystal Growth

Volumn 249, Issue 1-2, 2003, Pages 208-215

  Kimoto, T ^a   Hirao, T ^a   Nakazawa, S ^a   Shiomi, H ^b   Matsunami, H ^a  

^a KYOTO UNIVERSITY   (Japan)

^b SiXON Ltd   (Japan)

Author keywords

A1. Doping; A3. Chemical vapor deposition; A3. Vapor phase epitaxy; B2. Semiconducting silicon compounds

Indexed keywords

CHEMICAL VAPOR DEPOSITION; NITROGEN; SEMICONDUCTOR DOPING; VAPOR PHASE EPITAXY;

HOMOEPITAXIAL GROWTH;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0037297058     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02098-5     Document Type: Conference Paper

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