Nitrogen doping of 3C-SiC thin films grown by CVD in a resistively heated horizontal hot-wall reactor

Journal of Crystal Growth

Volumn 310, Issue 13, 2008, Pages 3174-3182

  Zielinski, M ^a   Portail, M ^b   Chassagne, T ^a   Juillaguet, S ^c   Peyre, H ^c  

^a SAVOIE TECHNOLAC   (France)

^b CNRS   (France)

^c UNIV MONTPELLIER   (France)

Author keywords

A1. Doping; A1. Stresses; A3. Chemical vapor deposition processes; A3. Hot wall epitaxy; B1. Silicon carbide

Indexed keywords

DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; FILM GROWTH; FLOW RATE; GROWTH TEMPERATURE; PRESSURE EFFECTS;

DOPANT INCORPORATION; DOPING EFFICIENCY; HOT-WALL REACTORS; REACTOR PRESSURE;

THIN FILMS;

EID: 44649161235     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.03.022     Document Type: Article

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