Structural and morphological characterization of 3C-SiC films grown on (111), (211) and (100) silicon substrates

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 231-234

  Portail, M ^a   Nemoz, M ^a   Zielinski, M ^b   Chassagne, T ^b  

^a CRHEA CNRS   (France)

^b SAVOIE TECHNOLAC   (France)

Author keywords

3C SiC; Carbonization; CVD; Twin defects

Indexed keywords

CARBONIZATION; CHEMICAL VAPOR DEPOSITION; DEFECTS; SUBSTRATES;

3C-SIC; CARBONIZATION CONDITIONS; CRYSTALLINE QUALITY; HETEROEPITAXIAL FILMS; INTERFACIAL DEFECT; MORPHOLOGICAL CHARACTERIZATION; MORPHOLOGICAL MODIFICATION; SILICON SUBSTRATES;

SILICON CARBIDE;

EID: 52349112465     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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