Investigation of the interface manipulation in SiC(100) on Si (100) with isovalent impurities

Surface and Interface Analysis

Volumn 38, Issue 4, 2006, Pages 444-447

  Pezoldt, J ^a,d   Morales, F M ^a   Zgheib, Ch ^b   Forster Ch ^a   Stauden, Th ^a   Ecke, G ^a   Wang, Ch ^a   Masri, P ^c  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b NOTRE DAME UNIVERSITY   (Lebanon)

^c UNIVERSITÉ MONTPELLIER 2   (France)

^d Institut fur Mikro und Nanotechnologien   (Germany)

Author keywords

Heteroepitaxy; Interface control; SiC; SIMS; TEM

Indexed keywords

SECONDARY ION MASS SPECTROMETRY; SILICON; SURFACE CHEMISTRY; TRANSMISSION ELECTRON MICROSCOPY;

HETEROEPITAXY; HETEROSTRUCTURE PROPERTIES; INTERFACE CONTROL;

SILICON CARBIDE;

EID: 33646702856     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.2240     Document Type: Conference Paper

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