Developments for the production of high-quality and high-uniformity AlGaN/GaN heterostructures by ammonia MBE

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 434-436

  Cordier, Y ^a,c   Semond, F ^a,c   Massies, J ^a,c   Leroux, M ^a   Lorenzini, P ^a   Chaix, C ^b,c  

^a CRHEA CNRS   (France)

^b Riber   (France)

^c GaN Process Technology Center   (France)

Author keywords

A3. Molecular beam epitaxy; B1. Nitrides; B3. High electron mobility transistors

Indexed keywords

AMMONIA; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON;

ALGAN; CELLS DESIGN; RECOVERY OF AMMONIA;

HETEROJUNCTIONS;

EID: 33947491285     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.286     Document Type: Article

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