Strain and wafer curvature of 3C-SiC films on silicon: Influence of the growth conditions

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 4, 2007, Pages 981-986

  Zielinski, M ^a,b   Ndiaye, S ^a   Chassagne, T ^b   Juillaguet, S ^c   Lewandowska, R ^c,d   Portail, M ^a   Leycuras, A ^a   Camassel, J ^c  

^a CRHEA CNRS   (France)

^b SAVOIE TECHNOLAC   (France)

^c UNIVERSITÉ MONTPELLIER 2   (France)

^d HORIBA LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CREEP EFFECT; SILICON SUBSTRATES;

CREEP; FILM GROWTH; PHOTOLUMINESCENCE; SILICON CARBIDE; SILICON WAFERS; STRAIN;

THIN FILMS;

EID: 34547315181     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200674130     Document Type: Conference Paper

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