Realization of AlGaN/GaN HEMTs on 3C-SiC/Si(111) substrates

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1983-1985

  Cordier, Y ^a   Portail, M ^a   Chenot, S ^a   Tottereau, O ^a   Zielinski, M ^b   Chassagne, T ^b  

^a CRHEA CNRS   (France)

^b SAVOIE TECHNOLAC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

3C-SIC FILMS; ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; GAN FILM; GAN ON SILICON; HEAT DISSIPATION; SI(111) SUBSTRATE; STRUCTURAL QUALITIES; THERMAL EXPANSION COEFFICIENTS;

CRYSTAL GROWTH; ELECTRON MOBILITY; EPITAXIAL FILMS; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SUBSTRATES; THERMAL EXPANSION; TRANSISTORS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 72049090876     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778641     Document Type: Conference Paper

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