Regrowth of 3C-SiC on CMP treated 3C-SiC/Si epitaxial layers

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 197-200

  Mank, Hugues ^a   Moisson, Catherine ^a   Turover, Daniel ^a   Twigg, Mark ^b   Saddow, Stephen E ^c  

^a SAVOIE TECHNOLAC   (France)

^b NAVAL RESEARCH LABORATORY   (United States)

^c UNIVERSITY OF SOUTH FLORIDA   (United States)

Author keywords

(001)Si; 3C SiC; Chemical mechanical polishing (CMP); Epilayer; Regrowth

Indexed keywords

CHEMICAL MECHANICAL POLISHING; EPITAXIAL GROWTH; INTERFACES (MATERIALS); NUCLEATION; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY;

3C-SIC; REGROWTH;

EPITAXIAL LAYERS;

EID: 35148851101     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.197     Document Type: Conference Paper

References (4)

1. M. A. Capano, J. Wan, M. R. Melloch, and J. A. Cooper, Jr.: IEEE Electron Device Lett., Vol. 23 (2002), p. 482-484.
2. R.L. Myers, S.E. Saddow, S. Rao, K.D. Hobart, M. Fatemi, F.J. Kub: Mater. Sci. Forum Vol. 457-460 (2004), p. (In press).
3. S. Monnoye, D. Turover and P. Vicente: Silicon Carbide Recent Major Advances, Springer, (2004), p. 699-710.
4. P.Vicente, E.Pernot, D.Chaussende, J.Camassel: Mater. Sci. Forum Vol. 389-393 (2001), p. 729-732.