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Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 19, Issue 5, 2001, Pages 2636-2641

Formation mechanism of interfacial voids in the growth of SiC films on Si substrates

(5) Kim, Kwang Chul a Park, Chan Il a Roh, Jae Il a Nahm, Kee Suk a Seo, Young Hun b

a Chonbuk National University (South Korea)

b ANAM Semiconductor Co Inc (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; FILM GROWTH; HYDROGEN; MOLECULAR BEAM EPITAXY; NUCLEATION; REACTIVE ION ETCHING; SILICON WAFERS; SUBSTRATES; SURFACE TOPOGRAPHY; THIN FILMS;

INTERFACIAL VOIDS; SURFACE ORIENTATION;

SILICON CARBIDE;

EID: 0035443321 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.1399321 Document Type: Article

Times cited : (46)

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