Atomic-step observations on 6H- And 15R-SiC polished surfaces

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 729-732

  Vicente, P ^a,b   Pernot, E ^c   Chaussende, D ^a,c   Camassel, J ^b  

^a SAVOIE TECHNOLAC   (France)

^b UNIV MONTPELLIER   (France)

^c GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

Author keywords

Atomic steps; Chemico mechanical polishing; Surface preparation

Indexed keywords

CHEMICAL MECHANICAL POLISHING; CRYSTAL ATOMIC STRUCTURE; SILICON CARBIDE; SILICON WAFERS; POLISHING;

ATOMIC STEPS; SINGLE BILAYER STEPS; STEP STRUCTURES; SURFACE PREPARATION; ATOMIC STEP; CRYSTAL QUALITIES; MECHANICAL POLISHING; MIS-ORIENTATION; POLISHED SURFACES; STEP STRUCTURE; STEP WIDTHS;

SURFACE PHENOMENA; SILICON CARBIDE;

EID: 0013527327     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.729     Document Type: Article

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