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Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 207-210

Strain in 3C-SiC heteroepitaxial layers grown on (100) and (111) oriented silicon substrates

(4) Zielinski, M a Portail, M b Chassagne, T a Cordier, Y b

a SAVOIE TECHNOLAC (France)

b CRHEA CNRS (France)

Author keywords

3C SiC; Strain; Wafer bending

Indexed keywords

EPITAXIAL GROWTH; SILICON WAFERS; SUBSTRATES;

3C-SIC; GASEOUS PHASIS; GROWTH CONDITIONS; HETEROEPITAXIAL LAYERS; ORIENTED SILICON; PHASE GROWTH; PROPERTY; RESIDUAL STRAINS; SILICON SUBSTRATES; WAFER BENDING;

SILICON CARBIDE;

EID: 63849112433 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.600-603.207 Document Type: Conference Paper

Times cited : (7)

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