Influence of Cr-doping on microstructure and piezoelectric response of AlN films

Journal of Physics D: Applied Physics

Volumn 42, Issue 23, 2009, Pages

  Luo, J T ^a   Fan, B ^a   Zeng, F ^a   Pan, F ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AL-POLARITY; ALN; ALN FILMS; CR CONCENTRATION; CR-DOPING; CRYSTALLINITIES; MICROSTRUCTURE AND PROPERTIES; PIEZOELECTRIC CONSTANT; PIEZOELECTRIC FORCE MICROSCOPY; PIEZOELECTRIC RESPONSE; SECONDARY PHASE; WURTZITE LATTICE; X-RAY ABSORPTION NEAR-EDGE STRUCTURE;

ABSORPTION SPECTROSCOPY; ALUMINUM; ALUMINUM NITRIDE; NITRIDES; PIEZOELECTRIC TRANSDUCERS; PIEZOELECTRICITY; TEXTURES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC SULFIDE;

CHROMIUM;

EID: 70450250426     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/23/235406     Document Type: Article

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