Preparation of highly oriented aluminum nitride thin films on molybdenum bottom electrodes using metal interlayers

Journal of Materials Science

Volumn 40, Issue 5, 2005, Pages 1159-1162

  Akiyama, M ^a   Ueno, N ^a   Tateyama, H ^a   Nagao, K ^b   Yamada, T ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UBE INDUSTRIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ALUMINUM NITRIDE; COMPOSITE FILMS; CRYSTAL ORIENTATION; ELECTRODES; GOLD; GOLD DEPOSITS; MOLYBDENUM; NITRIDES; THIN FILMS;

ALUMINUM NITRIDE (ALN); ALUMINUM NITRIDE THIN FILMS; BOTTOM ELECTRODES; CRYSTALLINITIES; METAL INTERLAYERS; ROCKING CURVES; SILICON SUBSTRATES; SPUTTERING CONDITIONS;

FILM PREPARATION;

EID: 84983212625     PISSN: 00222461     EISSN: 15734803     Source Type: Journal    
DOI: 10.1007/s10853-005-6932-2     Document Type: Article

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