Cr-substitution-induced ferroelectric and improved piezoelectric properties of Zn1-x Crx O films

Journal of Applied Physics

Volumn 103, Issue 7, 2008, Pages

  Yang, Y C ^a   Song, C ^a   Wang, X H ^a   Zeng, F ^a   Pan, F ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHROMIUM; FERROELECTRICITY; SUBSTITUTION REACTIONS; ZINC COMPOUNDS;

FERROELECTRIC MEASUREMENTS; NONEQUILIBRIUM REACTIVE MAGNETRON COSPUTTERING;

OXIDE FILMS;

EID: 42149191207     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2903152     Document Type: Article

References (28)

1. J. F. Scott and C. A. Paz de Araujo, Science 246, 1400 (1989).
2. Q. T. Islam and B. A. Bunker, Phys. Rev. Lett. 59, 2701 (1987).
3. R. Weil, R. Nkum, E. Muranevich, and L. Benguigui, Phys. Rev. Lett. 62, 2744 (1989).
4. Y. Hotta, E. Rokuta, H. Tabata, H. Kobayashi, and T. Kawai, Appl. Phys. Lett. 78, 3283 (2001).
5. A. Onodera, N. Tamaki, Y. Kawamura, T. Sawada, and H. Yamashita, Jpn. J. Appl. Phys., Part 1 35, 5160 (1996).
6. Dhananjay and S. B. Krupanidhi, Appl. Phys. Lett. 89, 082905 (2006).
7. Y. C. Yang, C. Song, F. Zeng, F. Pan, Y. N. Xie, and T. Liu, Appl. Phys. Lett. 90, 242903 (2007).
8. T. Shibata, K. Unno, E. Makino, Y. Ito, and S. Shimada, Sens. Actuators, A 102, 106 (2002).
9. S. H. Kim, J. S. Lee, H. C. Choi, and Y. H. Lee, IEEE Electron Device Lett. 20, 113 (1999).
10. J. Molarius, J. Kaitila, T. Pensala, and M. Ylilammi, J. Mater. Sci. 14, 431 (2003).
11. M. H. Zhao, Z. L. Wang, and S. X. Mao, Nano Lett. 4, 587 (2004).
12. J. A. Christman, R. R. Woolcott, Jr., A. I. Kingon, and R. J. Nemanich, Appl. Phys. Lett. 73, 3851 (1998).
13. Z. W. Jin, T. Fukumura, M. Kawasaki, K. Ando, H. Saito, T. Sekiguchi, Y. Z. Yoo, M. Murakami, Y. Matsumoto, T. Hasegawa, and H. Koinuma, Appl. Phys. Lett. 78, 3824 (2001).
14. R. D. Shannon and C. T. Prewitt, Acta Crystallogr., Sect. B: Struct. Crystallogr. Cryst. Chem. 25, 925 (1969).
15. J. Hays, A. Punnoose, R. Baldner, M. H. Engelhard, J. Peloquin, and K. M. Reddy, Phys. Rev. B 72, 075203 (2005).
16. A. Fouchet, W. Prellier, P. Padhan, C. Simon, and B. Mercey, J. Appl. Phys. 95, 7187 (2004).
17. B. K. Roberts, A. B. Pakhomov, V. S. Shutthanandan, and K. M. Krishnan, J. Appl. Phys. 97, 10D310 (2005).
18. A. M. Venezia, C. M. Loxon, and J. A. Horton, Surf. Sci. 225, 195 (1990).
19. C. Xu, M. Hassel, H. Kuhlenbeck, and H. J. Freund, Surf. Sci. 258, 23 (1991).
20. A. Maetaki, M. Yamamoto, H. Matsumoto, and K. Kishi, Surf. Sci. 445, 80 (2000).
21. Dhananjay, J. Nagaraju, and S. B. Krupanidhi, J. Appl. Phys. 99, 034105 (2006).
22. T. Kanashima and M. Okuyama, Jpn. J. Appl. Phys., Part 1 38, 2004 (1999).
23. Y. Watanabe, Phys. Rev. B 59, 11257 (1999).
24. D. R. Lamb, Electric Conduction Mechanism in Thin Insulating Films (Methuen, London, 1967).
25. D. S. Shang, Q. Wang, L. D. Chen, R. Dong, X. M. Li, and W. Q. Zhang, Phys. Rev. B 73, 245427 (2006).
26. S. V. Kalinin and D. A. Bonnell, Phys. Rev. B 65, 125408 (2002).
27. Y. C. Yang, C. Song, X. H. Wang, F. Zeng, and F. Pan, Appl. Phys. Lett. 92, 012907 (2008).
28. A. L. Kholkin, E. K. Akdogan, A. Safari, P.-F. Chauvy, and N. Setter, J. Appl. Phys. 89, 8066 (2001).