Molecular beam epitaxy and doping of AlN at high growth temperatures

Journal of Physics D: Applied Physics

Volumn 39, Issue 21, 2006, Pages 4616-4620

  Boger, R ^a   Fiederle, M ^a   Kirste, L ^b   Maier, M ^b   Wagner, J ^b  

^a UNIVERSITY OF FREIBURG   (Germany)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTALLINE MATERIALS; MOLECULAR BEAM EPITAXY; SAPPHIRE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SUBSTRATES;

CRYSTALLINE QUALITY; DOPANTS; GROWTH TEMPERATURES; RADIO FREQUENCY PLASMA;

ALUMINUM NITRIDE;

EID: 33751282921     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/39/21/017     Document Type: Article

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