Study of 193nm resist degradation under various etch chemistries

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6519, Issue PART 2, 2007, Pages

  Bazin, Arnaud ^a,b   May, Michael ^a   Pargon, Erwine ^b   Mortini, Bénédicte ^a   Joubert, Olivier ^b  

^a STMICROELECTRONICS   (France)

^b Joseph Fourier University   (France)

Author keywords

DMA; Etch chemistry; Etch rate; Etch resistance; FTIR; Photoresists; XPS

Indexed keywords

DRY ETCHING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MASKS; NANOPARTICLES; POLYSTYRENES; X RAY PHOTOELECTRON SPECTROSCOPY;

ACRYLATE POLYMERS; ETCH CHEMISTRY; ETCH RATE; ETCH RESISTANCE; RESIST FILMS; RESIST FORMULATIONS;

PHOTORESISTS;

EID: 35148854661     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.711415     Document Type: Conference Paper

References (10)

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3. P. Argitis et al., Etch Resistance Enhancement and Absorbance Optimization with Polyaromatic Compounds for the Design of 193nm Phototresists, Microelectronic Engineering 41/42 (1998) 335-358
4. K. Patterson et al., Improving the Performance of 193nm Photoresists Based on Alicyclic Polymers, Proc. SPIE, 333, p425-437
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6. H. Gokan et al., J. Electrochem. Soc. 130, 143 (1983)
7. B. Mortini et al., Investigation of 193-nm resist and plasma interactions during an oxide etching process, Proc. SPIE, 5039, 847-857 (2003)
8. H. Kawahira et al., Changes of Chemical Nature of Photoresists Induced by Various Plasma Treatments and Their Impact on LWR, Proc. SPIE, 6153 (2006)
9. M. May et al., Evaluating resist degradation during reactive ion oxide etching using 193nm model polymer resist formulations, Proc. SPIE, 6153 (2006)
10. A.P.Mahorowala et al., Line edge roughness reduction by plasma curing photoresists, Proc. SPIE, 5753, p381-389 (2005)